描述:K4S64163LH – R(B)E/N/G/C/L/F February 2004 Mobile-SDRAM is a 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per- formance memory system applications.
描述:SAMSUNG K4S64163LH – R(B)E/N/G/C/L/F 数据手册,查找说明书,说明书,指南,手册,用户指南,使用说明,操作说明,说明书下载,说明书大全
文件大小:128 KB
文件校验:B7FE5F2DFC7D728E94D9F73AC34B56D4
详情:K4S64163LH – R(B)E/N/G/C/L/F February 2004 Mobile-SDRAM is a 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per- formance memory system applications.