描述:HUF75307P3, HUF75307D3, HUF75307D3S 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75307.
描述:intersil HUF75307P3, HUF75307D3, HUF75307D3S 数据手册,查找说明书,说明书,指南,手册,用户指南,使用说明,操作说明,说明书下载,说明书大全
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desc:HUF75307P3, HUF75307D3, HUF75307D3S 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75307.