描述:M36L0R7050T0/B0是128 Mbit（Multiple Bank，Multi-Level，Burst）Flash Memory和32 Mbit（2M x16）PSRAM，1.8V Supply Multi-Chip Package，支持Synchronous Burst Read mode，54MHz，Asynchronous Page Read mode，Random Access: 85ns，10µs typical Word program time using Buffer Program，Multiple Bank Memory Array: 8 Mbit Banks，Parameter Blocks（Top or Bottom location），All blocks locked at power-up，Any combination of blocks can be locked with zero latency，WPF for Block Lock-Down，Absolute Write Protection with VPPF = VSS，100,000 PROGRAM/ERASE CYCLES per BLOCK。
描述:ST M36L0R7050T0 M36L0R7050B0 数据手册,查找说明书,说明书,指南,手册,用户指南,使用说明,操作说明,说明书下载,说明书大全
文件大小:110 KB
文件校验:B2FEF2B6995498E9EB5700170F77E22E
desc:M36L0R7050T0/B0是128 Mbit（Multiple Bank，Multi-Level，Burst）Flash Memory和32 Mbit（2M x16）PSRAM，1.8V Supply Multi-Chip Package，支持Synchronous Burst Read mode，54MHz，Asynchronous Page Read mode，Random Access: 85ns，10µs typical Word program time using Buffer Program，Multiple Bank Memory Array: 8 Mbit Banks，Parameter Blocks（Top or Bottom location），All blocks locked at power-up，Any combination of blocks can be locked with zero latency，WPF for Block Lock-Down，Absolute Write Protection with VPPF = VSS，100,000 PROGRAM/ERASE CYCLES per BLOCK。